onsemi · FETs & Power MOSFETs · MPN FDS6612A
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| Gate Charge(Qg) | 7.6nC |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 8.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 560pF |
30V 8.4A 3V 2.5W 22mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS