onsemi · FETs & Power MOSFETs · MPN FDS6576
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| Gate Charge(Qg) | 43nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 504pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 20mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.044nF |
| Type | P-Channel |
20V 11A 1.5V 2.5W 20mΩ@2.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS