onsemi · FETs & Power MOSFETs · MPN FDS6575
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| Gate Charge(Qg) | 74nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 884pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 451pF |
| RDS(on) | 17mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.951nF |
| Type | P-Channel |
P-Channel 20V 10A 2.5W Surface Mount SOIC-8