onsemi · FETs & Power MOSFETs · MPN FDS6064N7
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| Gate Charge(Qg) | 98nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 703pF |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF |
| RDS(on) | 3.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.191nF |
| Type | N-Channel |
20V 23A 1.5V 3W 3.5mΩ@4.5V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS