onsemi FDS5690

onsemi · FETs & Power MOSFETs · MPN FDS5690

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Specifications

Gate Charge(Qg)23nC@30V
Drain to Source Voltage60V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)22mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.107nF

Technical details

N-Channel 60V 7A 2.5W Surface Mount SO-8

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