onsemi FDS4935BZ

onsemi · FETs & Power MOSFETs · MPN FDS4935BZ

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Specifications

Current - Continuous Drain(Id)6.9A
Pd - Power Dissipation1.6W
RDS(on)22mΩ@10V
Gate Threshold Voltage (Vgs(th))1.9V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)200pF
Number2 P-Channel
Input Capacitance(Ciss)1.36nF
Gate Charge(Qg)40nC
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 6.9A 1.6W Surface Mount SO-8

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