onsemi FDS4935

onsemi · FETs & Power MOSFETs · MPN FDS4935

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)21nC@5V
Output Capacitance(Coss)311pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)152pF
RDS(on)35mΩ@4.5V
Number2 P-Channel
Input Capacitance(Ciss)1.233nF
TypeP-Channel

Technical details

30V 7A 3V 2W 35mΩ@4.5V 2 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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