onsemi FDS4897AC

onsemi · FETs & Power MOSFETs · MPN FDS4897AC

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)5.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation900mW
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)39mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.015nF

Technical details

N-Channel+P-Channel Array 40V 5.2A 0.9W Surface Mount SO-8

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