onsemi FDS4885C

onsemi · FETs & Power MOSFETs · MPN FDS4885C

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)41nC@10V
Output Capacitance(Coss)215pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)42mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.56nF
TypeN-Channel + P-Channel

Technical details

40V 7.5A 5V 1.6W 42mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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