onsemi FDS4685

onsemi · FETs & Power MOSFETs · MPN FDS4685

No reviews yet — be the first to review onsemi FDS4685.

Specifications

Gate Charge(Qg)27nC@5V
Drain to Source Voltage40V
Output Capacitance(Coss)256pF
Current - Continuous Drain(Id)8.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)134pF
RDS(on)35mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.872nF
TypeP-Channel

Technical details

P-Channel 40V 8.2A 50W Surface Mount SO-8

Related FETs & Power MOSFETs