onsemi FDS4559

onsemi · FETs & Power MOSFETs · MPN FDS4559

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Specifications

Current - Continuous Drain(Id)3.5A
RDS(on)105mΩ@10V
Pd - Power Dissipation1.2W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)39pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)759pF
Gate Charge(Qg)-
Operating Temperature-55℃~+175℃

Technical details

N-Channel+P-Channel Array 60V 3.5A 1.2W Surface Mount SO-8

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