onsemi FDS4488

onsemi · FETs & Power MOSFETs · MPN FDS4488

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)13nC@10V
Current - Continuous Drain(Id)7.9A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)97pF
RDS(on)30mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)927pF
TypeN-Channel

Technical details

30V 7.9A 3V 40W 30mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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