onsemi · FETs & Power MOSFETs · MPN FDS4465
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| Gate Charge(Qg) | 120nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 13.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 8.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 8.237nF |
P-Channel 20V 13.5A 2.5W Surface Mount SO-8