onsemi · FETs & Power MOSFETs · MPN FDS3890
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| Current - Continuous Drain(Id) | 4.7A |
|---|---|
| RDS(on) | 44mΩ@10V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 80V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.18nF |
| Gate Charge(Qg) | 35nC@10V |
| Vgs | ±20V |
| Operating Temperature | -55℃~+175℃ |
N-Channel Array 80V 4.7A Surface Mount SO-8