onsemi FDS3890

onsemi · FETs & Power MOSFETs · MPN FDS3890

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Specifications

Current - Continuous Drain(Id)4.7A
RDS(on)44mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))4V
Drain to Source Voltage80V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)50pF
Number2 N-Channel
Input Capacitance(Ciss)1.18nF
Gate Charge(Qg)35nC@10V
Vgs±20V
Operating Temperature-55℃~+175℃

Technical details

N-Channel Array 80V 4.7A Surface Mount SO-8

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