onsemi FDS3692

onsemi · FETs & Power MOSFETs · MPN FDS3692

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Specifications

Gate Charge(Qg)11nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)746pF

Technical details

N-Channel 100V 4.5A 2.5W Surface Mount SO-8

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