onsemi FDS3682

onsemi · FETs & Power MOSFETs · MPN FDS3682

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)190pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)35mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

100V 6A 4V 2.5W 35mΩ@10V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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