onsemi · FETs & Power MOSFETs · MPN FDS3572
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 8.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 16mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.99nF |
80V 8.9A 4V 2.5W 16mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS