onsemi FDS3512

onsemi · FETs & Power MOSFETs · MPN FDS3512

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)58pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)80mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)634pF
TypeN-Channel

Technical details

N-Channel 80V 2.5W Surface Mount SOP-8

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