onsemi · FETs & Power MOSFETs · MPN FDS2672
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| Gate Charge(Qg) | 46nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 70mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.535nF |
N-Channel 200V 3.9A 2.5W Surface Mount SO-8