onsemi FDS2672

onsemi · FETs & Power MOSFETs · MPN FDS2672

No reviews yet — be the first to review onsemi FDS2672.

Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)3.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)70mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.535nF

Technical details

N-Channel 200V 3.9A 2.5W Surface Mount SO-8

Related FETs & Power MOSFETs