onsemi · FETs & Power MOSFETs · MPN FDS2582
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 4.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 66mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.29nF |
N-Channel 150V 4.1A 2.5W Surface Mount SO-8