onsemi · FETs & Power MOSFETs · MPN FDS2570
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 62nC@10V |
| Output Capacitance(Coss) | 117pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 90mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.907nF |
| Type | N-Channel |
150V 4A 4V 30W 90mΩ@6V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS