onsemi FDPF55N06

onsemi · FETs & Power MOSFETs · MPN FDPF55N06

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)490pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)22mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.51nF
TypeN-Channel

Technical details

N-Channel 60V 55A 48W Through Hole TO-220F

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