onsemi FDPF2D3N10C

onsemi · FETs & Power MOSFETs · MPN FDPF2D3N10C

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)152nC@10V
Current - Continuous Drain(Id)222A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.18nF

Technical details

N-Channel 100V 222A 45W Through Hole TO-220F

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