onsemi FDPF20N50T

onsemi · FETs & Power MOSFETs · MPN FDPF20N50T

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Specifications

Gate Charge(Qg)59.5nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation38.5W
Reverse Transfer Capacitance (Crss@Vds)465pF
RDS(on)230mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.12nF
TypeN-Channel

Technical details

N-Channel 500V 20A 38.5W Through Hole TO-220F

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