onsemi FDPF18N50T

onsemi · FETs & Power MOSFETs · MPN FDPF18N50T

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation38.5W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)265mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.86nF
TypeN-Channel

Technical details

500V 18A 5V 38.5W 265mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS

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