onsemi FDPF18N50

onsemi · FETs & Power MOSFETs · MPN FDPF18N50

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)265mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.2nF
TypeN-Channel

Technical details

N-Channel 500V Through Hole TO-220F

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