onsemi FDPF10N60ZUT

onsemi · FETs & Power MOSFETs · MPN FDPF10N60ZUT

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.98nF
TypeN-Channel

Technical details

N-Channel 600V 9A 42W Through Hole TO-220F

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