onsemi FDPF10N50FT

onsemi · FETs & Power MOSFETs · MPN FDPF10N50FT

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)850mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.17nF
TypeN-Channel

Technical details

N-Channel 500V 9A 42W Through Hole TO-220F

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