onsemi · FETs & Power MOSFETs · MPN FDP8N50NZ
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 130W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 770mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 735pF |
N-Channel 500V 8A 130W Through Hole TO-220