onsemi · FETs & Power MOSFETs · MPN FDP8D5N10C
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 76A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.4W;107W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 8.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.475nF |
100V 76A 4V 8.5mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS