onsemi FDP8896

onsemi · FETs & Power MOSFETs · MPN FDP8896

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Specifications

Gate Charge(Qg)48nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)490pF
Current - Continuous Drain(Id)92A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.525nF
TypeN-Channel

Technical details

N-Channel 30V 92A 80W Through Hole ITO-220AB-3

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