onsemi FDP8880

onsemi · FETs & Power MOSFETs · MPN FDP8880

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)255pF
Current - Continuous Drain(Id)54A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)147pF
RDS(on)14.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.24nF
TypeN-Channel

Technical details

30V 54A 2.5V 55W 14.5mΩ@4.5V 1 N-channel N-Channel ITO-220AB-3 Single FETs, MOSFETs RoHS

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