onsemi FDP8876

onsemi · FETs & Power MOSFETs · MPN FDP8876

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)10.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.7nF
TypeN-Channel

Technical details

30V 70A 2.5V 70W 10.5mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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