onsemi · FETs & Power MOSFETs · MPN FDP8874
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| Gate Charge(Qg) | 56nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 590pF |
| Current - Continuous Drain(Id) | 114A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 345pF |
| RDS(on) | 5.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.13nF |
| Type | N-Channel |
30V 114A 2.5V 110W 5.3mΩ@10V 1 N-channel N-Channel ITO-220AB-3 Single FETs, MOSFETs RoHS