onsemi FDP8870-F085

onsemi · FETs & Power MOSFETs · MPN FDP8870-F085

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)132nC@10V
Output Capacitance(Coss)970pF
Current - Continuous Drain(Id)156A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)570pF
RDS(on)4.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.2nF
TypeN-Channel

Technical details

30V 156A 2.5V 160W 4.6mΩ@4.5V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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