onsemi FDP86363-F085

onsemi · FETs & Power MOSFETs · MPN FDP86363-F085

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Specifications

Configuration-
Drain to Source Voltage80V
Gate Charge(Qg)150nC@10V
Output Capacitance(Coss)1.4nF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10nF

Technical details

N-Channel 80V 110A 300W Through Hole TO-220AB

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