onsemi FDP75N08A

onsemi · FETs & Power MOSFETs · MPN FDP75N08A

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Specifications

Gate Charge(Qg)104nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)959pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation137W
Reverse Transfer Capacitance (Crss@Vds)129pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.468nF
TypeN-Channel

Technical details

75V 75A 4V 137W 11mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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