onsemi FDP6676S

onsemi · FETs & Power MOSFETs · MPN FDP6676S

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Specifications

Gate Charge(Qg)40nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)76A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)316pF
RDS(on)8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.853nF
TypeN-Channel

Technical details

30V 76A 3V 70W 8mΩ@4.5V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs

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