onsemi FDP6676

onsemi · FETs & Power MOSFETs · MPN FDP6676

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)60nC@5V
Current - Continuous Drain(Id)84A
Operating Temperature --65℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation93W
RDS(on)7.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.324nF
TypeN-Channel

Technical details

30V 84A 3V 93W 7.5mΩ@4.5V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs

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