onsemi · FETs & Power MOSFETs · MPN FDP65N06
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| Gate Charge(Qg) | 43nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 600pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 135W |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| RDS(on) | 16mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.17nF |
| Type | N-Channel |
60V 65A 4V 135W 16mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS