onsemi · FETs & Power MOSFETs · MPN FDP55N06
No reviews yet — be the first to review onsemi FDP55N06.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 37nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 490pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 114W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.51nF |
60V 55A 4V 114W 22mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS