onsemi · FETs & Power MOSFETs · MPN FDP52N20
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 700pF |
| Current - Continuous Drain(Id) | 52A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 357W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 49mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
| Type | N-Channel |
N-Channel 200V 52A 357W Through Hole TO-220