onsemi FDP52N20

onsemi · FETs & Power MOSFETs · MPN FDP52N20

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Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation357W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)49mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

N-Channel 200V 52A 357W Through Hole TO-220

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