onsemi FDP51N25

onsemi · FETs & Power MOSFETs · MPN FDP51N25

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)690pF
Current - Continuous Drain(Id)51A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.41nF
TypeN-Channel

Technical details

N-Channel 250V 51A Through Hole TO-220

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