onsemi FDP39N20

onsemi · FETs & Power MOSFETs · MPN FDP39N20

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Specifications

Gate Charge(Qg)49nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)39A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation251W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)66mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.13nF
TypeN-Channel

Technical details

N-Channel 200V 39A 251W Through Hole TO-220

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