onsemi FDP3672

onsemi · FETs & Power MOSFETs · MPN FDP3672

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage105V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)41A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)33mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.67nF
TypeN-Channel

Technical details

105V 41A 4V 135W 33mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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