onsemi FDP3652

onsemi · FETs & Power MOSFETs · MPN FDP3652

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Specifications

Gate Charge(Qg)53nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)61A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)16mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.88nF
TypeN-Channel

Technical details

N-Channel 100V 61A 150W Through Hole TO-220

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