onsemi · FETs & Power MOSFETs · MPN FDP2D3N10C
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| Drain to Source Voltage | 100V |
|---|---|
| Current - Continuous Drain(Id) | 222A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.18nF |
100V 222A 214W Through Hole TO-220