onsemi · FETs & Power MOSFETs · MPN FDP22N50N
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| Gate Charge(Qg) | 49nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 312.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 185mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.2nF |
500V 22A 3V 312.5W 185mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS