onsemi · FETs & Power MOSFETs · MPN FDP18N50
No reviews yet — be the first to review onsemi FDP18N50.
| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 430pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 235W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 265mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.86nF |
| Type | N-Channel |
N-Channel 500V 18A 235W Through Hole TO-220