onsemi · FETs & Power MOSFETs · MPN FDP150N10A-F102
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| Gate Charge(Qg) | 16.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 267pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 91W |
| RDS(on) | 12.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.08nF |
| Type | N-Channel |
100V 50A 2V 91W 12.5mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS